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| SBD T y p e : C30T04QH-11A 30T0 QHT04 OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.45g Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg C30T04QH-11A 40 45(pulse width 1s duty 1/50) 50 Hz Full Sine Wave 30 Tc=114C Resistive Load 33.3 50Hz Full Sine Wave ,1cycle 250 Non-repetitive -40 to +150 -40 to +150 Unit V V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 15 A per arm Min. Typ. Max. 1 0.61 1.5 Unit mA V C /W Rth(j-c) Junction to Case C_T_ 11A OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C30T04QH/C30T04QH-11A (per Arm) 100 INSTANTANEOUS FORWARD CURRENT (A) 50 20 Tj=25C Tj=150C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C30T04QH/C30T04QH-11A (Total) RECT 180 SINE WAVE 24 AVERAGE FORWARD POWER DISSIPATION (W) 20 16 12 8 4 0 0 5 10 15 20 25 30 35 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 100 C30T04QH/C30T04QH-11A (per Arm) PEAK REVERSE CURRENT (mA) 50 20 10 0 10 20 30 40 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C30T04QH/C30T04QH-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 2.0 RECT 180 1.6 SINE WAVE 1.2 0.8 0.4 0 0 10 20 30 40 REVERSE VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =40 V C30T04QH/C30T04QH-11A (Total) RECT 180 SINE WAVE 35 AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 300 C30T04QH/C30T04QH-11A SURGE FORWARD CURRENT (A) 250 200 150 100 50 0.02s I FSM 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C30T04QH/C30T04QH-11A (per Arm) 2000 JUNCTION CAPACITANCE (pF) 1000 500 200 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V) |
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